FDMC86012: 30V N-Channel Power Trench® MOSFET

This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.

Features

• Max r_DS(on) = 2.7 mΩ at V_GS = 4.5 V, I_D = 23 A
  
• Max r_DS(on) = 4.7 mΩ at V_GS = 2.5 V, I_D = 17.5 A
  
• High performance technology for extremely low r_DS(on)
  
• Termination is Lead-free
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes