FDMC86261P: -150 P-Channel Shielded Gate PowerTrench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.

Features

• Max r_DS(on) = 160 mΩ at V_GS = -10 V, I_D = -2.4 A
• Max r_DS(on) = 185 mΩ at V_GS = -6 V, I_D = -2.2 A
• Very low R_DS-on mid voltage P channel silicon technology optimised for low Qg
• This product is optimised for fast switching applications as well as load switch applications
• 100% UIL Tested
• RoHS Compliant

Application Notes