FDMD84100: 100V Dual N-Channel PowerTrench® MOSFET

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.

Features

• Max r_DS(on) = 20 mΩ at V_GS = 10 V, I_D = 7 A
• Max r_DS(on) = 32 mΩ at V_GS = 6 V, I_D = 5.5 A
• Ideal for flexible layout in secondary side synchronous rectification
• Termination is Lead-free and RoHS Compliant
• 100% UIL tested

Application Notes