FDMD8530: Dual N-Channel PowerTrench® MOSFET

This device includes two 30V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Features

• Max r_DS(on) = 1.25 mΩ at V_GS = 10 V, I_D = 35 A
  
• Max r_DS(on) = 1.5 mΩ at V_GS = 4.5 V, I_D = 32 A
  
• Max r_DS(on) = 1.25 mΩ at V_GS = 10 V, I_D = 35 A
  
• Max r_DS(on) = 1.5 mΩ at V_GS = 4.5 V, I_D = 32 A
  
• Ideal for Flexible Layout in Primary Side of Bridge Topology
  
• 100% UIL Tested
  
• Kelvin High Side MOSFET Drive Pin-out Capability
  
• RoHS Compliant
  

Application Notes