FDMD86100: Dual N-Channel Shielded Gate PowerTrench® MOSFET

This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 10.5 mΩ at V_GS = 10 V, I_D = 10 A
  
• Max r_DS(on) = 17.3 mΩ at V_GS = 6 V, I_D = 7.8 A
  
• Ideal for flexible layout in secondary side synchronous rectification
  
• Termination is Lead-free and RoHS Compliant
  
• 100% UIL tested
  

Application Notes