FDMS3669S: 30V Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.

Features

• Q1: N-Channel
  
• Max r_DS(on) = 10 mΩ at V_GS = 10 V, I_D = 13 A
  
• Max r_DS(on) = 14.5 mΩ at V_GS = 4.5 V, I_D = 10 A
  Q2: N-Channel
  
• Max r_DS(on) = 5 mΩ at V_GS = 10 V, I_D = 18 A
  
• Max r_DS(on) = 5.2 mΩ at V_GS = 4.5 V, I_D = 17 A
  
• Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  
• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  
• RoHS Compliant
  

Application Notes