FDMS8333L: N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

Features

• Max R_DS(on) = 3.1 mΩ at V_GS = 10 V, I_D = 22 A
  
• Max R_DS(on) = 4.3 mΩ at V_GS = 4.5 V, I_D = 19 A
  
• Advanced Package and Silicon combination for low r_DS(on) and high efficiency
  
• Next generation enhanced body diode technology, engineered for soft recovery
  
• MSL1 robust package design
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes