FDMS8880: 30V N-Channel PowerTrench® MOSFET

The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

• Max r_DS(on) = 8.5 mΩ at V_GS = 10 V, I_D = 13.5 A
• Max r_DS(on) = 13.0 mΩ at V_GS = 4.5 V, I_D = 10.9 A
• Advanced Package and Silicon combinationfor low r_DS(on) and high efficiency
• MSL1 robust package design
• RoHS Compliant

Application Notes