FDN304P: P-Channel 1.8V Specified PowerTrench® MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• -2.4 A, -20 V. R_DS(on) = 0.052 Ω @ V_GS = -4.5 V R_DS(on) = 0.070 Ω @ V_GS = -2.5 VR_DS(on) = 0.100 Ω @ V_GS = -1.8 V
• Fast switching speed
• High performance trench technology for extremelylow R_DS(ON)
• SuperSOT TM -3 provides low R_DS(ON) and 30% higher power handling capability than SOT23 in the samefootprint

Application Notes