FDN308P: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• –20 A, –1.5 V.
• R_DS(ON)= 125 mΩ @ VGS = –4.5 V
• R_DS(ON) = 190 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremelylow R_DS(ON)
• SuperSOT™ -3 provides low R_DS(ON) and 30% higher power handling capability than SOT23 in the samefootprint

Application Notes