FDN335N: N-Channel 2.5V Specified PowerTrench® MOSFET

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 1.7 A, 20 V. R_DS(on) = 0.07 Ω @ V_GS = 4.5 V. R_DS(on) = 0.100 Ω @ V_GS = 2.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely lowR_DS(ON).
• High power and current handling capability.

Application Notes