FDN342P: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V).

Features

• -2 A, -20 V. R_DS(ON) = 0.08 Ω @ V_GS = -4.5 V, R_DS(ON) = 0.13 Ω @ V_GS = -2.5 V.
• Extended V_GSS range (±12V) for battery applications.
• High performance trench technology for extremely low R_DS(ON).
• Enhanced power SuperSOT™-3 (SOT-23).

Application Notes