FDN360P: Single P-Channel PowerTrench® MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• -2 A, -30 V
• R_DS(on) = 80 mΩ @ V_GS = -10 V
• R_DS(on) = 125 mΩ @ V_GS = -4.5 V
• Low gate charge (6.2nC typical)
• High performance trench technology for extremely low R_DS(ON)
• High power version of industry Standard SOT-23package. Identical pin-out to SOT-23 with 30%higher power handling capability.

Application Notes