FDP036N10A: N-Channel PowerTrench® MOSFET 100V, 214A, 3.6mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Features

• R_DS(on) = 3.2mΩ ( Typ.)@ V_GS = 10V, I_D = 75A
• Fast Switching Speed
• Low Gate Charge, Q_G = 89nC ( Typ.)
• High Performance Trench Technology for Extremely Low R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant

Application Notes