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Home > Fairchild Semiconductor > FET > FDP8030L

FDP8030L: 30V N-Channel Logic Level PowerTrench® MOSFET

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDP8030L Datasheet
Features
  • 80A, 30V
    • RDS(ON) = 0.0035 Ω@ VGS =10 V
    • RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.0035 Ω@ VGS =10 V
  • RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
  • Critical DC electrical parameters specified at elevatedtemperature
  • Rugged internal source-drain diode can eliminate the needfor an external Zener diode transient suppressor
  • High performance trench technology for extremely lowRDS(ON)
  • 175°C maximum junction temperature rating
    .
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
FDP8030LFull Production ROHS Compliant as of 27-Feb-2006  China RoHS$2.9489TO-220 3L  -  4.83 x 10.16 x 8.89mm,  RAIL
  • PDF TO-220 3L  Drawing Last Update: Nov 2015
  • PDF TO220-3L, JEDEC VARIATION, PACKING DRAWING Last Update: Oct 2013
  • PDF TO Tube Packing Drawing Last Update: Sep 2015
  • PDF TO Vacuum Packing Drawing Last Update: Sep 2015
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 2FDP8030L

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • FDP8030L Datasheet
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    TO-220 3L  Drawing Last Update: Nov 2015
    TO220-3L, JEDEC VARIATION, PACKING DRAWING Last Update: Oct 2013
    TO Tube Packing Drawing Last Update: Sep 2015
    TO Vacuum Packing Drawing Last Update: Sep 2015
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
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