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Home > Fairchild Semiconductor > FET > FDPF10N60NZ

FDPF10N60NZ: N-Channel UniFETTM II MOSFET 600V, 10A, 750mΩ

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

FDPF10N60NZ Datasheet
Features
  • RDS(on) = 640mΩ ( Typ.)@ VGS = 10V, ID = 5A
  • Low gate charge ( Typ. 23nC)
  • Low Crss ( Typ. 10pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
FDPF10N60NZFull Production Green as of Mar 2011  China RoHS$1.548TO-220F 3L  -  4.7 x 10.06 x 15.87mm,  RAIL
  • TO-220F 3L  Drawing Last Update: Feb 2017
  • TO220-3L, FULL PACK, STRAIGHT LEAD, PACKING DRAWING Last Update: May 2013
  • TO220F-3L, PACKING DRAWING Last Update: May 2013
  • TO220-3L FULL PACKING TUBE PACKING DRAWING Last Update: May 2013
  • TO220F_PACKING DRAWING Last Update: May 2013
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 2FDPF

Line 310N60NZ

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • AN-9725 Robust Body Diode Characteristics of the Latest Power MOSFETs, UniFET™ II for Resonant Converters Last Update : 28-Jun-2014
  • FDPF10N60NZ.pdf
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    Robust Body Diode Characteristics of the Latest Power MOSFETs, UniFET™ II for Resonant Converters Last Update : 28-Jun-2014
    TO-220F 3L  Drawing Last Update: Feb 2017
    TO220-3L, FULL PACK, STRAIGHT LEAD, PACKING DRAWING Last Update: May 2013
    TO220F-3L, PACKING DRAWING Last Update: May 2013
    TO220-3L FULL PACKING TUBE PACKING DRAWING Last Update: May 2013
    TO220F_PACKING DRAWING Last Update: May 2013
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
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