FDS2572: 150V N-Channel UltraFET® Trench MOSFET

UltraFET® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features

• R_DS(ON) = 0.040Ω (Typ.), V
  = 10V
  
• Q_g(TOT) = 29nC (Typ.), V_GS = 10V
  
• Low Q_RR Body Diode
  
• Maximized efficiency at high frequencies
  
• UIS Rated
  

Application Notes