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Fairchild Semiconductor
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> FDS4141_F085
FDS4141_F085: -40V, -10.5A, 13mΩ, SO-8 P-Channel PowerTrench®
FDS4141_F085 Datasheet
Features
Typ r
DS(on)
= 10.5mΩ at V
GS
= -10V, I
D
= -10.5A
Typ r
DS(on)
= 14.8mΩ at V
GS
= -4.5V, I
D
= -8.4A
Typ Q
g(TOT)
= 35nC at V
GS
= -10V
High performance trench technology for extremely low r
DS(on)
RoHS Compliant
Qualified to AEC Q101
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
FDS4141_F085
Full Production Green as of Dec 2009 China RoHS
$0.479
SO 8L NB - 1.75 x 3.9 x 4.9mm, TAPE REEL
SO 8L NB Drawing
Last Update: Nov 2015
MO8A SON8, Packing Drawing
Last Update: Oct 2015
SOIC 8L TR packing drawing
Last Update: May 2013
SOIC 8L PACKING DRAWING
Last Update: May 2013
SOIC 8L PACKING DRAWING
Last Update: May 2013
SOIC Tape And Reel Packing Drawing
Last Update: Jun 2016
Line 1
$Y
(Fairchild logo)
&Z
(Plant Code)
&2
(2-Digit Date Code)
&K
Line 2
FDS
Line 3
4141
Application Notes
AN-1029
Maximum Power Enhancement Techniques for SO-8 Power MOSFETs
Last Update : 05-Mar-2011
FDS4141_F085.pdf
SO 8L NB Drawing
Last Update: Nov 2015
MO8A SON8, Packing Drawing
Last Update: Oct 2015
SOIC 8L TR packing drawing
Last Update: May 2013
SOIC 8L PACKING DRAWING
Last Update: May 2013
SOIC 8L PACKING DRAWING
Last Update: May 2013
SOIC Tape And Reel Packing Drawing
Last Update: Jun 2016
Maximum Power Enhancement Techniques for SO-8 Power MOSFETs
Last Update : 05-Mar-2011
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