FDS4897AC: Dual N & P-Channel PowerTrench® MOSFET

These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

• Max. R_DS(on) = 26 mΩ at V_GS = 10 V, I_D = 6.1 A
• Max. R_DS(on) = 31 mΩ at V_GS = 4.5 V, I_D = 5.6 A
• Max. R_DS(on) = 39 mΩat V_GS = -10 V, I_D = -5.2 A
• Max. R_DS(on) = 65 mΩ at V_GS = -4.5 V, I_D= -4.1 A
• 100% UIL Tested
• RoHS Compliant

Application Notes