FDS5351: 60V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Max r_DS(on) = 35mΩ at V_GS = 10V, I_D = 6.1A
• Max r_DS(on) = 42mΩ at V_GS = 4.5V, I_D = 5.5A
• High performance trench technology for extremely low r_DS(on)
• 100% UIL Tested
• RoHS Compliant

Application Notes