FDS6673BZ_F085: -30V, -14.5A, 7.8mΩ, SO-8 P-Channel PowerTrench®

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

• Max r_DS(on) = 7.8mΩ, V_GS = -10V, I_D = -14.5A
• Max r_DS(on) = 12mΩ, V_GS = -4.5V, I_D = -12A
• Extended V_GS range (-25V) for battery applications
• HBM ESD protection level of 6.5kV typical (note 3)
• High performance trench technology for extremely lowr_DS(on)
• High power and current handling capability
• RoHS compliant
• Qualified to AEC Q101

Application Notes