FDS8817NZ: 30V N-Channel PowerTrench® MOSFET

This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

• Max r_DS(on) = 7.0mΩ at V_GS = 10V, I_D = 15A
• Max r_DS(on) = 10mΩ at V_GS = 4.5V, I_D = 12.6A
• HBM ESD protection level of 3.8kV typical (note 3)
• High performance trench technology for extremely low r_DS(on)
• High power and current handling capability
• RoHS compliant

Application Notes