FDS8882: 30V N-Channel PowerTrench® MOSFET

The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

• Max r_DS(on) = 20.0 mΩ at V_GS = 10 V, I_D = 9 A
  
• Max r_DS(on) = 22.5 mΩ at V_GS = 4.5 V, I_D = 8 A
  
• High performance trench technology for extremely low r_DS(on) and fast switching
  
• High power and current handling capability
  
• Termination is Lead-free and RoHS Compliant
  

Application Notes