FDS8958B: 30V Dual N & P-Channel PowerTrench® MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• Max. R_DS(on) = 26 mΩat V_GS = 10 V, I_D = 6.4 A
• Max. R_DS(on) = 39 mΩ at V_GS = 4.5 V, I_D = 5.2 A
• Max. R_DS(on) = 51 mΩ at V_GS = -10 V, I_D = -4.5 A
• Max. R_DS(on) = 80 mΩat V_GS= -4.5 V, I_D = -3.3 A
• HBM ESD protection level > 3.5 kV
• RoHS Compliant

Application Notes