FDT434P: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• -5.5 A, -20 V. R_DS(on) = 0.050 Ω @ V_GS = -4.5 V, R_DS(on) = 0.070 Ω @ V_GS = -2.5 V
• Low gate charge (13nC typical).
• High performance trench technology for extremelylow R_DS(on) .
• High power and current handling capability in a widelyused surface mount package.

Application Notes