FDT458P: -30V P-Channel PowerTrench® MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

• 3.4 A, -30 V
• R_DS(ON) = 130 mΩ @ V_GS = 10 V
• R_DS(ON) = 200 mΩ @ V_GS = 4.5 V
• Fast switching speed
• Low gate charge (2.5nC typical)
• High performance trench technology for extremelylow R_DS(on)
• High power and current handling capability in awidely used surface mount package

Application Notes