FDY1002PZ: -20V Dual P-Channel (-1.5 V) Specified PowerTrench® MOSFET

This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V.

Features

• Max r_DS(on) = 0.5 Ω at V_GS = –4.5 V, I_D = –0.83 A
• Max r_DS(on) = 0.7 Ω at V_{GS =} –2.5 V, I_D = –0.70 A
• Max r_DS(on) = 1.2 Ω at V_GS = –1.8 V, I_D = –0.43 A
• Max r_DS(on) = 1.8 Ω at V_GS = –1.5 V, I_D = –0.36 A
• HBM ESD protection level = 1400 V (Note 3)
• RoHS Compliant

Application Notes