FDZ1323NZ: 20V Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art“low pitch” WLCSP packaging process, the FDZ1323NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, lowgate charge and low rS1S2(on).

Features

• Max r_S1S2(on) = 13 mΩ at V_GS = 4.5 V, I_S1S2 = 1 A
  
• Max r_S1S2(on) = 13 mΩ at V_GS = 4 V, I_S1S2 = 1 A
  
• Max r_S1S2(on) = 13 mΩ at V_GS = 3.8 V, I_S1S2 = 1 A
  
• Max r_S1S2(on) = 16 mΩ at V_GS = 3.7 V, I_S1S2 = 1 A
  
• Max r_S1S2(on) = 16 mΩ at V_GS = 3.1 V, I_S1S2 = 1 A
  
• Max r_S1S2(on) = 18 mΩ at V_GS = 2.5 V, I_S1S2 = 1 A
  
• Occupies only 3 mm² of PCB area
  
• Ultra-thin package: less than 0.35 mm height when mounted to PCB
  
• High power and current handling capability
  
• HBM ESD protection level > 3.6kV (Note 3)
  
• RoHS Compliant
  

Application Notes