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Home > Fairchild Semiconductor > FET > FDZ371PZ

FDZ371PZ: -20V P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).

FDZ371PZ Datasheet
Features
  • Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A
  • Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A
  • Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A
  • Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A
  • Occupies only 1.0 mm2 of PCB area. Less than 30% of thearea of 2 x 2 BGA
  • Ultra-thin package: less than 0.4 mm height when mounted to PCB
  • HBM ESD protection level >4.4kV typical (Note 3)
  • RoHS Compliant
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
FDZ371PZFull Production Green as of Mar 2014  China RoHS$0.1801WL-CSP 4L  -  0.4 x 1 x 1mm,  TAPE REEL
  • WL-CSP 4L  Drawing Last Update: Jan 2015
  • WLCSP 1.0x1.0, Packing Drawing Last Update: Jan 2016
  • WLCSP, Packing Drawing Last Update: Jul 2015
  • WLCSP Tape and Reel Packing Drawing Last Update: Jun 2016
Line 1&Y (Binary Calendar Year Coding)

Line 2&E (Space)
K&X

Line 3&. (Pin One)

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • FDZ371PZ.pdf
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    WL-CSP 4L  Drawing Last Update: Jan 2015
    WLCSP 1.0x1.0, Packing Drawing Last Update: Jan 2016
    WLCSP, Packing Drawing Last Update: Jul 2015
    WLCSP Tape and Reel Packing Drawing Last Update: Jun 2016
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
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