FFSH15120ADN: Silicon Carbide Schottky Diode
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density andreduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
Features
- Max Junction Temperature 175 °C
- Avalanche Rated 80 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
Ordering CodeProduct | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
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FFSH15120ADN_F155 | Full Production
Green as of Jan 2016
China RoHS | $8.8125 | TO-247 3L
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4.7 x 15.62 x 20.57mm,
RAIL | Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2FFSH
Line 315120ADN
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