FFSP08120A: Silicon Carbide Schottky Diode
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
Features
- Max Junction Temperature 175 °C
- Avalanche Rated 80 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
Ordering CodeProduct | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
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FFSP08120A | Full Production
ROHS Compliant as of 27-Feb-2006
China RoHS | $4.4 | TO-220 2L
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4.83 x 10.67 x 31.24mm,
RAIL | Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2FFSP
Line 308120A
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