FGD3N60LSD: 600V, 3A, 1.2V, DPAKPlanar IGBT

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.

Features

• High Current Capability
• Very Low Saturation Voltage : V_CE(sat) = 1.2 V at I_C = 3 A
• High Input Impedance