FGH40T65UQDF: 650 V, 40 A Field Stop Trench IGBT

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer superior con-duction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.

Features

• Maximum Junction Temperature: T_J = 175°C
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V_CE(sat) = 1.33 V ( Typ.) @ I_C = 40 A
• 100% of the Parts tested for I_LM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant