FJBE2150D: ESBC™ Rated NPN Silicon Transistor

The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.

The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.

The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.

The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.

Features

• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Squared RBSOA: Up to 1500 V
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance (Typ. 12 pF Capacitance at 200 V)
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to High dv/dt Transients

Application Notes