FJP2160D: ESBC™ Rated NPN Silicon Transistor

The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBC™ configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1600 volts and up to 3amps while providing exceptionally low on-resistance and very low switching losses.

The ESBC™ switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and fast switching, The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.

The FJP2160D provides exceptional reliability and a large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors; it is not prone to static dv/dt failures.

Features

• Low Equivalent On Resistance
  
• Very Fast Switch : 150KHz
  
• Squared RBSOA : Up to 1600Volts
  
• Avalanche Rated
  
• Low Driving Capacitance, no Miller Capacitance (Typ 12pF Cap @ 200volts)
  
• Low Switching Losses
  
• Reliable HV switch : No False Triggering due to High dv/dt Transients.