FQD5N50C 500V N-Channel Advance QFET® C-Series _ BDTIC a Leading Distributor in China

数据手册DataSheet 下载：FQD5N50C 500V N-Channel Advance QFET® C-Series.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. 欲了解更多信息，请访问模型页面.

产品特点

4.0A, 500V, RDS(on) = 1.4Ω @VGS = 10 V
Low gate charge (typical 18 nC)
Low Crss (typical 15 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

订购型号

订购型号	产品状态	定价	封装&包装信息	封装丝印	资格支持
FQD5N50CTM	从2011年12月13日起停产符合 RoHS 标准替代部件编号: FDD5N50NZTM	N/A	TO-252 3L (DPAK) - 细节 2.285 x 6.54 x 9.905mm to-252 3l (dpak) 示意图 to252-3l, jedec option aa reel packing drawing to252-3l, packing drawing to252-3l packing drawing	第一行:$Y (飞兆徽标) &Z (工厂编码) &3 (3 位日期代码) &K 第二行:FQD 第三行:5N50C	RƟJA : 50 °C/W RƟJC : 2.6 °C/W Moisture Sensitivity Level (MSL) : 1 显示更多... Max Reflow Temp : 260