FQP12P10: P-Channel QFET® MOSFET -100V, -11.5A, 290mΩ

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for lowvoltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features

• -11.5 A, -100 V, R_DS(on) = 290 mΩ (Max.) @ V_GS = -10 V, I_D = -5.75 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 65 pF)
• 100% Avalanche Tested
• 175oC Maximum Junction Temperature Rating

Application Notes