数据手册DataSheet 下载：FQP50N06 60V N-Channel MOSFET QFET®.pdf
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. 欲了解更多信息，请访问 模型页面.
| 订购型号 | 产品状态 | 定价 | 封装&包装信息 | 封装丝印 | 资格支持 |
| FQP50N06 | 不推荐用于新设计 符合 RoHS 标准 | N/A | TO-220 3L - 细节 4.83 x 10.16 x 8.89mm to-220 3l 示意图 to220-3l, jedec variation, packing drawing | 第一行:$Y (飞兆徽标) &Z (工厂编码) &3 (3 位日期代码) &K 第二行:FQP 第三行:50N06 | RƟJA : 62.5 °C/W RƟJC : 1.24 °C/W |
