数据手册DataSheet 下载：FQPF5N60C 600V N-Channel Advance QFET® C-Series.pdf
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
| 订购型号 | 产品状态 | 定价 | 封装&包装信息 | 封装丝印 | 资格支持 |
| FQPF5N60C | 不推荐用于新设计 符合 RoHS 标准 | N/A | TO-220F 3L - 细节 4.7 x 10.06 x 15.87mm to-220f 3l 示意图 to220-3l, full pack, straight lead, packing drawing to220f-3l, packing drawing to220-3l full packing tube packing drawing to220f_packing drawing | 第一行:$Y (飞兆徽标) &Z (工厂编码) &3 (3 位日期代码) &K 第二行:FQPF 第三行:5N60C | RƟJA : 62.5 °C/W RƟJC : 3.79 °C/W |
