企业微信：@BDTIC
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
| H11F3M Datasheet |
| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|---|---|---|---|
| H11F3SVM | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $1.1193 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
BULK
| Line 1N/A
|
| H11F3SR2VM | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $1.1726 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
BULK
| Line 1N/A
|
| H11F3SR2M | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $1.1193 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
BULK
| Line 1N/A
|
| H11F3VM | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $1.0746 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
BULK
| Line 1N/A
|
| H11F3SM | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $1.0746 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
BULK
| Line 1N/A
|
| H11F3M | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $1.0468 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
BULK
| Line 1N/A
|
