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HGTP3N60A4: 600V, SMPS IGBT
The HGTP3N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
| HGTP3N60A4 Datasheet |
Features
- 8A, 600V @ TC = 110°C
- Low Saturation Voltage : V CE(sat) = 2.0 V @ I C = 3A
- Typical Fall Time. . . . . . . . . . 70ns at TJ = 125°C
- Low Conduction Loss
| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|---|---|---|---|
| HGTP3N60A4 | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $1.227 | TO-220 3L
-
4.83 x 10.16 x 8.89mm,
RAIL
| Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 23N60A4 |
| HGTP3N60A4 | 0.7 | 0.6 | 55 | 150 |
- TO-220 3L Drawing Last Update: Nov 2015
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