HUF75321D3ST: N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.

HUF75321D3ST Datasheet

Features

20A, 55V
Temperature Compensating PSPICE® and SABER™Models
Thermal Impedance SPICE and SABER ModelsAvailable on the web at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
HUF75321D3ST	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$0.576	TO-252 3L (DPAK) - 2.285 x 6.54 x 9.905mm, TAPE REEL TO-252 3L (DPAK) Drawing Last Update: Jun 2016 TO252-3L, JEDEC OPTION AA REEL PACKING DRAWING Last Update: Oct 2016 TO252-3L, PACKING DRAWING Last Update: May 2013 TO252-3L packing drawing Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 275321D