HUF75639P3: N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

HUF75639P3 Datasheet

Features

56A, 100V
Simulation models
Temperature Compensated PSPICE® and SABER™ Electrical Models
SPICE and SABER Thermal Impedance Models
Peak Current vs Pulse Width Curve
UIS Rating CurveThese N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
HUF75639P3	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$1.476	TO-220 3L - 4.83 x 10.16 x 8.89mm, RAIL TO-220 3L Drawing Last Update: Nov 2015 TO220-3L, JEDEC VARIATION, PACKING DRAWING Last Update: Oct 2013 TO Tube Packing Drawing Last Update: Sep 2015 TO Vacuum Packing Drawing Last Update: Sep 2015	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 275639P