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Fairchild Semiconductor
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Bipolar Transistors
> KSC1009
KSC1009: NPN Epitaxial Silicon Transistor
KSC1009 Datasheet
Features
High Collector-Base Voltage : V
C
=160V
Collector Current : I
C
=700mA
Collector Dissipation : P
C
=800mW
Complement to KSA709
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)High Voltage Amplifier
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
KSC1009YTA
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.0244
TO-92 3L - 4.19 x 5.2 x 21.77mm, AMMO
TO-92 3L Drawing
Last Update: Oct 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
Line 1
C1009
Line 3
Y-
&3
(3-Digit Date Code)
Application Notes
AN-1025
Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs
Last Update : 15-Jun-2015
KSC1009.pdf
TO-92 3L Drawing
Last Update: Oct 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs
Last Update : 15-Jun-2015
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