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Fairchild Semiconductor
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Bipolar Transistors
> KSP06
KSP06: NPN Epitaxial Silicon Transistor
KSP06 Datasheet
Features
Collector-Emitter Voltage : V
CBO
= KSP05: 60V
Collector-Emitter Voltage : V
CBO
=KSP06: 80V
Collector Dissipation: P
C
(max) = 625mW
Complement to KSP55/56Amplifier Transistor
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
KSP06BU
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.0289
TO-92 3L - 4.19 x 5.2 x 20.95mm, BULK
TO-92 3L Drawing
Last Update: Mar 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
Line 1
KSP
Line 2
06
Line 3
-
&3
(3-Digit Date Code)
KSP06TA
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.0304
TO-92 3L - 4.19 x 5.2 x 21.77mm, AMMO
TO-92 3L Drawing
Last Update: Oct 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
Line 1
KSP
Line 2
06
Line 3
-
&3
(3-Digit Date Code)
Application Notes
AN-1025
Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs
Last Update : 15-Jun-2015
KSP06.pdf
TO-92 3L Drawing
Last Update: Mar 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
TO-92 3L Drawing
Last Update: Oct 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs
Last Update : 15-Jun-2015
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