KST5551: NPN Epitaxial Silicon Transistor _ BDTIC a Leading Distributor in China

KST5551: NPN Epitaxial Silicon Transistor

KST5551 Datasheet

Features

Collector-Emitter Voltage : V_CEO= 160V
Collector Dissipation: P_C (max) = 350mWAmplifier Transistor

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
KST5551MTF	Full Production Green as of Aug 2013 China RoHS	$0.0173	SOT-23 3L - 1.2 x 2.92 x 1.3mm, TAPE REEL SOT-23 3L Drawing Last Update: Apr 2016 SOT Tape and Reel Packing Drawing Last Update: Oct 2016	Line 1G1

Application Notes

AN-1025 Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs Last Update : 15-Jun-2015

SOT-23 3L Drawing Last Update: Apr 2016

SOT Tape and Reel Packing Drawing Last Update: Oct 2016

Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs Last Update : 15-Jun-2015

©1993 - 2024 BDTIC