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Fairchild Semiconductor
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Bipolar Transistors
> MJE800
MJE800: NPN Epitaxial Silicon Darlington Transistor
MJE800 Datasheet
Features
Monolithic Construction with Built-in Base-Emitter Resistors
High DC Current Gain: h
FE
=750 (Min.) @ I
C
=1.5 and 2.0 A DC
Complement to MJE700/701/702/703
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
MJE800STU
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.2348
TO-126 3L - 3.25 x 8 x 11mm, RAIL
PDF TO-126 3L Drawing
Last Update: Jun 2016
PDF TO126-3L, PACKING DRAWING
Last Update: May 2014
PDF TO126_TUBE AND BULK PACKING DRAWING
Last Update: May 2013
Line 1
$Y
(Fairchild logo)
&Z
(Plant Code)
&E
(Space)
&3
(3-Digit Date Code)
Line 2
MJE800
MJE800STU
0.7
0.6
55
150
MJE800 Datasheet
TO-126 3L Drawing
Last Update: Jun 2016
TO126-3L, PACKING DRAWING
Last Update: May 2014
TO126_TUBE AND BULK PACKING DRAWING
Last Update: May 2013
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