NDB6020P: P-Channel Logic Level Enhancement Mode Field Effect Transistor

These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

• -24 A, -20 V.
  
  • RDS(ON) = 0.05 Ω @ VGS= -4.5 V
  • RDS(ON) = 0.07 Ω @ VGS= -2.7 V
  • RDS(ON) = 0.075 Ω @ VGS= -2.5 V
• RDS(ON) = 0.05 Ω @ VGS= -4.5 V
  
• RDS(ON) = 0.07 Ω @ VGS= -2.7 V
  
• RDS(ON) = 0.075 Ω @ VGS= -2.5 V
  
• Critical DC electrical parameters specified at elevated temperature.
  
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  
• 175°C maximum junction temperature rating.
  
• High density cell design for extremely low R_DS(ON).
  
• TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
  

Application Notes