NDS0610: P-Channel Enhancement Mode Field Effect Transistor

This P-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0610 can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features

• -0.12 A, -60 V. R_DS(ON) = 10 Ω @ V_GS = -10 V R_DS(ON) = 20 Ω @ V_GS = -4.5 V
• Voltage controlled p-channel small signal switch
• High density cell design for low _RDS(ON)
• High saturation current

Application Notes