NDS332P: P-Channel Logic Level Enhancement Mode Field Effect Transistor

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics,     and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

• -1 A, -20 V, RDS(ON) = 0.41Ω @ VGS= -2.7 V, RDS(ON) = 0.3 Ω @ VGS = -4.5 V.
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V.
• Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
• High density cell design for extremely low RDS(ON).
• Exceptional on-resistance and maximum DC current capability.
• Compact industry standard SOT-23 surface Mount package.

Application Notes